學術期刊論文
  1. Pao-Hsun Huang, Chi-Wei Wang, Shui-Yang Lien, Kuan-Wei Lee, Na-Fu Wang, Chien-Jung Huang, "Investigation of the stability of methylammonium lead iodide (mapbi3) film doped with lead cesium triiodide (cspbi3) quantum dots under an oxygen plasma atmosphere", Molecules, vol. 26, no. 2678, pp. 1-9, 2021.05
    國際期刊 SCI,多位作者(第四作者), Impact Factor: 3.267, Rank Factor: 70/177
    Subject Categories: CHEMISTRY, MULTIDISCIPLINARY
  2. Cheng-Hung Lai, Tsung-Ying Lee, Jung-Sheng Huang, Kuan-Wei Lee, Yeong-Her Wang, "The growth of solution-gelation tio2 and its application to inalas/ingaas metamorphic high-electron-mobility transistor", Materials science in semiconductor processing, vol. 129, no. 105804, pp. 1-11, 2021.03
    國際期刊 SCI,多位作者(通訊作者), Impact Factor: 3.085, Rank Factor: 46/155
    Subject Categories: PHYSICS, APPLIED
  3. Yuan-Ming Chen, Hsien-Cheng Lin, Kuan-Wei Lee, Yeong-Her Wang, "Inverted-type inalas/inas high-electron-mobility transistor with liquid phase oxidized inalas as gate insulator", Materials, vol. 14, no. 970, pp. 1-10, 2021.02
    國際期刊 SCI,多位作者(通訊作者), Impact Factor: 3.057, Rank Factor: 132/314
    Subject Categories: MATERIALS SCIENCE, MULTIDISCIPLINARY
  4. Houng-Wei Chen, Tsung-Ying Lee, Jung-Sheng Huang, Kuan-Wei Lee, Yeong-Her Wang, "Planarized trench isolation of in0.52al0.48as/in0.8ga0.2as metamorphic high-electron-mobility transistor by liquid phase chemical enhanced oxidation", Ieee journal of the electron devices society, vol. 9, pp. 271-277, 2021.02
    國際期刊 SCI,多位作者(通訊作者), Impact Factor: 2.555, Rank Factor: 119/266
    Subject Categories: ENGINEERING, ELECTRICAL & ELECTRONIC
  5. Pao-Hsun Huang, Yu-Hao Chen, Shui-Yang Lien, Kuan-Wei Lee, Na-Fu Wang, Chien-Jung Huang, "Effect of annealing on innovative cspbi3-qds doped perovskite thin films", Crystals, vol. 11, no. 101, pp. 1-10, 2021.01
    國際期刊 SCI,多位作者(第四作者), Impact Factor: 2.404, Rank Factor: 10/26
    Subject Categories: CRYSTALLOGRAPHY
  6. Y. S. Chen, C. Y. Kao, K. W. Lee, and Y. H. Wang, "Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation", Vacuum, vol. 171, no. 109007, pp. 1-5, 2020.01
    國際期刊 SCI,多位作者(通訊作者), Impact Factor: 2.906, Rank Factor: 55/155
    Subject Categories: Physics, Applied
    NSC 101-2221-E-214-039 and NSC 102-2221-E-214-055
  7. J. J. Liou, W. R. Chen, C. C. Kang, K. W. Lee, S. W. Feng, and C. J. Huang, "White organic light-emitting diode using nano-double ultrathin carrier-trapping materials in performance stability", Sensors and Materials, vol. 31, no. 1, pp. 131-139, 2019.01
    國際期刊 SCI,多位作者(第四作者), Impact Factor: 0.482, Rank Factor: 57/61
    Subject Categories: INSTRUMENTS & INSTRUMENTATION
  8. J. J. Liou, P. H. Hsu, W. R. Chen, D. W Chou, K. W. Lee, N. F. Wang, S. W. Feng, and C. J. Huang, "Improving the quality and electrical properties of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) film by heating and stirring the solution", Sensors and Materials, vol. 31, no. 1, pp. 211-219, 2019.01
    國際期刊 SCI,多位作者(第五作者), Impact Factor: 0.482, Rank Factor: 57/61
    Subject Categories: INSTRUMENTS & INSTRUMENTATION
  9. J. S. Huang, K. W. Lee, C. Y. Huang, and S. F. Wang, "Analyses of responsivity and quantum efficiency of p-Si/i-β-FeSi2/n-Si photodiodes", Sensors and Materials, vol. 30, no. 4, pp. 925-932, 2018.04
    國際期刊 SCI,多位作者(通訊作者), Impact Factor: 0.519, Rank Factor: 51/58
    Subject Categories: INSTRUMENTS & INSTRUMENTATION
    義大機構典藏
  10. P. W. Sze, K. W. Lee, P. C. Huang, D. W. Chou, B. S. Kao, C. J. Huang, "The investigation of high quality PEDOT:PSS film by multilayer-processing and acid treatment", Energies, vol. 10, no. 5, pp. 716-1~716-11, 2017.05
    國際期刊 SCI,多位作者(第二作者), Impact Factor: 2.262, Rank Factor: 45/92
    Subject Categories: ENERGY & FUELS
    義大機構典藏
  11. K. Y. Lam, J. S. Huang, Y. J. Zou, K. W. Lee, and Y. H. Wang, "Reduced subthreshold characteristics and flicker noise of an AlGaAs/InGaAs PHEMT using liquid phase deposited TiO2 as a gate dielectric", Materials, vol. 9, no. 11, pp. 861, 2016.10
    國際期刊 SCI,多位作者(通訊作者), Impact Factor: 2.654, Rank Factor: 82/275
    Subject Categories: MATERIALS SCIENCE, MULTIDISCIPLINARY
    NSC100-2221-E-214-013
    義大機構典藏
  12. J. S. Huang, T. L. Lee, Y. J. Zou, K. W. Lee, and Y. H. Wang, "Sulfide pretreatment effects of liquid phase deposited TiO2 on AlGaAs and Its application", Vacuum, vol. 118, pp. 100-103, 2015.08
    國際期刊 SCI,多位作者(通訊作者), Impact Factor: 1.426, Rank Factor: 119/251
    Subject Categories: MATERIALS SCIENCE, MULTIDISCIPLINARY
    義大機構典藏
  13. J. S. Huang, K. W. Lee, and Y. H. Tseng, "Analysis of the high conversion efficiencies β-FeSi2 and BaSi2 n-i-p thin film solar cells", Journal of Nanomaterials, vol. 2014, no. Article ID 238291, pp. 1-5, 2014.09
    國際期刊 SCI,多位作者(第二作者), Impact Factor: 1.611, Rank Factor: 104/251
    Subject Categories: MATERIALS SCIENCE, MULTIDISCIPLINARY
    義大機構典藏
  14. C. C. Hu, T. L. Lee, Y. J. Zou, K. W. Lee, and Y. H. Wang, "Postoxidation thermal annealing effects of liquid phase deposited TiO2 on (NH4)2Sx-treated AlGaAs", Thin Solid Films, vol. 563, pp. 40-43, 2014.07
    國際期刊 SCI,多位作者(通訊作者), Impact Factor: 1.867, Rank Factor: 82/251
    Subject Categories: Materials Science, Coatings & Films
    義大機構典藏
  15. M. P. Houng, W. L. Lu, T. H. Yang, and K. W. Lee, "Characterization of the nanoporous template using anodic alumina method", Journal of Nanomaterials, vol. 2014, no. Article ID 130716, pp. 1-7, 2014.06
    國際期刊 SCI,多位作者(通訊作者), Impact Factor: 1.611, Rank Factor: 104/251
    Subject Categories: MATERIALS SCIENCE, MULTIDISCIPLINARY
    義大機構典藏
  16. C. C. Hu, C. E. Wu, H. C. Lin, K. W. Lee, and Y. H. Wang, "Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol-gel processed gate dielectrics", Materials Science in Semiconductor Processing, vol. 29, pp. 272-276, 2014.05
    國際期刊 SCI,多位作者(第四作者), Impact Factor: 1.761, Rank Factor: 76/247
    Subject Categories: ENGINEERING, ELECTRICAL & ELECTRONIC
    義大機構典藏
  17. K. W. Lee, T. S. Yang, W. L. Lu, and M. P. Houng, "Fabricating 20 cm x 20 cm porous template using anodic aluminum oxide", Integrated Ferroelectrics, vol. 143, pp. 47-57, 2013.05
    國際期刊 SCI,多位作者(第一作者), Impact Factor: 0.375, Rank Factor: 207/242
    Subject Categories: ENGINEERING, ELECTRICAL & ELECTRONIC
    義大機構典藏
  18. Kuan-Wei Lee*, Wei-Sheng Chen, "Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess", ECS Solid State Letters, vol. 2, no. 2, pp. Q9-Q11, 2012.12
    國際期刊 SCI, 其他(有ISSN碼),多位作者(第一作者), Impact Factor: 1.995, Rank Factor: 62/232
    Subject Categories: MATERIALS SCIENCE, MULTIDISCIPLINARY
    NSC 99-2221-E-214-067
    義大機構典藏
  19. K. W. Lee*, "Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO2 as the Gate Dielectric", ECS Journal of Solid State Science and Technology, vol. 2, no. 1, pp. Q27-Q29, 2012.11
    國際期刊 SCI, 其他(有ISSN碼),單一作者, Impact Factor: 1.995, Rank Factor: 62/232
    Subject Categories: MATERIALS SCIENCE, MULTIDISCIPLINARY
    NSC 100-2221-E-214-013
    義大機構典藏
  20. Hsien-Cheng Lin, Fang-Ming Lee, Yu-Chun Cheng, Kuan-Wei Lee, Feri Adriyanto, and Yeong-Her Wang, "InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric", Solid-State Electronics, vol. 68, pp. 27-31, 2011.11
    國際期刊 SCI, EI,多位作者(第四作者), Impact Factor: 1.440, Rank Factor: 80/247
    Subject Categories: ENGINEERING, ELECTRICAL & ELECTRONIC
    義大機構典藏
  21. Kuan-Wei Lee, Jung-Sheng Huang, Yu-Lin Lu, Fang-Ming Lee, Hsien-Cheng Lin, Tsu-Yi Wu, and Yeong-Her Wang, "Investigation of TiO2 on AlGaAs prepared by liquid phase deposition and its application", Solid-State Electronics, vol. 68, pp. 85-89, 2011.11
    國際期刊 SCI, EI,多位作者(第一作者), Impact Factor: 1.440, Rank Factor: 80/247
    Subject Categories: ENGINEERING, ELECTRICAL & ELECTRONIC
    NSC 98-2221-E-214-061
    義大機構典藏
  22. Hsien-Cheng Lin, Cheng-Chieh Wu, Fang-Ming Lee, Kuan-Wei Lee, Feri Adriyanto, and Yeong-Her Wang, "Characteristics of InGaP/InGaAs MOS-PHEMT with liquid phase-oxidized GaAs gate dielectric", Journal of The Electrochemical Society, vol. 158, no. 12, pp. H1225-H1227, 2011.10
    國際期刊 SCI, EI,多位作者(第四作者), Impact Factor: 2.427, Rank Factor: 1/18
    Subject Categories: MATERIALS SCIENCE, COATINGS & FILMS
    義大機構典藏
  23. K. W. Lee, J. S. Huang, Y. L. Lu, F. M. Lee, H. C. Lin, J. J. Huang, and Y. H. Wang, "Liquid-phase-deposited SiO2 on AlGaAs and its application", Semiconductor Science and Technology, vol. 26, no. 5, pp. 055006-1~055006-5, 2011.05
    國際期刊 SCI, EI,多位作者(第一作者), Impact Factor: 1.323, Rank Factor: 92/247
    Subject Categories: ENGINEERING, ELECTRICAL & ELECTRONIC
    NSC 98-2221-E-214-061
    義大機構典藏
  24. K. W. Lee , H. C. Lin, C. C. Wu, F. M. Lee, and Y. H. Wang, "Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor ", Solid-State Electronics, vol. 57, no. 1, pp. 80-82, 2011.03
    國際期刊 SCI, EI,多位作者(第一作者), Impact Factor: 1.438, Rank Factor: 79/247
    Subject Categories: ENGINEERING, ELECTRICAL & ELECTRONIC
    NSC 98-2221-E-214-061
    義大機構典藏
  25. K. W. Lee, H. C. Lin, F. M. Lee, W. S. Chen, and Y. H. Wang, "Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation", Electrochemical and Solid-State Letters, vol. 14, no. 2, pp. H73-H75, 2010.11
    國際期刊 SCI, EI,多位作者(第一作者), Impact Factor: 1.837, Rank Factor: 58/214
    Subject Categories: MATERIALS SCIENCE, MULTIDISCIPLINARY
    NSC 98-2221-E-214-061
    義大機構典藏
  26. H. C. Lin, K. W. Lee, C. H. Hsieh, Y. C. Cheng, and Y. H. Wang, "InAs native oxides prepared by liquid phase oxidation method", Journal of The Electrochemical Society, vol. 157, no. 11, pp. G230-G233, 2010.09
    國際期刊 SCI, EI,多位作者(第二作者), Impact Factor: 2.241, Rank Factor: 1/17
    Subject Categories: MATERIALS SCIENCE, COATINGS & FILMS
    NSC 97-2221-E-214-063
    義大機構典藏
  27. K. W. Lee, H. C. Lin, F. M. Lee, H. K. Huang, and Y. H. Wang, "Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess", Applied Physics Letters, vol. 96, no. 20, pp. 203506-1-203506-3, 2010.05
    國際期刊 SCI, EI,多位作者(第一作者), Impact Factor: 3.554, Rank Factor: 14/108
    Subject Categories: PHYSICS, APPLIED
    NSC 97-2221-E-214-063
    義大機構典藏
  28. K. W. Lee, H. C. Lin, K. L. Lee, C. H. Hsieh, and Y. H. Wang, "Comprehensive study of InAlAs/InGaAs metamorphic high electron mobility transistor with oxidized InAlAs gate", Journal of The Electrochemical Society, vol. 156, no. 12, pp. H925-H929, 2009.10
    國際期刊 SCI, EI,多位作者(第一作者), Impact Factor: 2.437, Rank Factor: 1/16
    Subject Categories: MATERIALS SCIENCE, COATINGS & FILMS
    NSC 97-2221-E-214-063
    義大機構典藏
  29. K. W. Lee, H. C. Lin, F. M. Lee, and Y. H. Wang, "Selective liquid phase oxidation of AlGaAs and application to AlGaAs/InGaAs pseudomorphic high electron mobility transistor", Journal of The Electrochemical Society, vol. 156, no. 10, pp. H763-H766, 2009.07
    國際期刊 SCI,多位作者(第一作者), Impact Factor: 2.437, Rank Factor: 1/16
    Subject Categories: MATERIALS SCIENCE, COATINGS & FILMS
    NSC 97-2221-E-214-063
    義大機構典藏
  30. Y. S. Huang, J. S. Huang, K. W. Lee, and F. L. Chang, "Quantum size effects of hydrogen impurity at off-center donor atom in spherical quantum dots", International Journal of Modern Physics B, vol. 23, no. 5, pp. 639-650, 2009.02
    國際期刊 SCI,多位作者(第三作者), Impact Factor: 0.558, Rank Factor: 52/62
    Subject Categories: PHYSICS, CONDENSED MATTER
    義大機構典藏
  31. K. W. Lee, H. C. Lin, C. H. Tu, K. L. Lee, and Y. H. Wang, "Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess", Journal of The Electrochemical Society, vol. 155, no. 11, pp. H932-H936, 2008.11
    國際期刊 SCI,多位作者(第一作者), Impact Factor: 2.483, Rank Factor: 1/18
    Subject Categories: MATERIALS SCIENCE, COATINGS & FILMS
    NSC 96-2218-E-214-010
    義大機構典藏
  32. K. W. Lee, K. L. Lee, H. C. Lin, C. H. Tu, C. C. Hu, and Y. H. Wang, "Near-room-temperature selective oxidation on InAlAs and application to In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs", Journal of The Electrochemical Society, vol. 154, no. 11, pp. H957-H961, 2007.11
    國際期刊 SCI,多位作者(第一作者), Impact Factor: 2.387
    Subject Categories: MATERIALS SCIENCE, COATINGS & FILMS
    義大機構典藏
  33. K. W. Lee, K. L. Lee, X. Z. Lin, C. H. Tu, and Y. H. Wang, "Improvement of impact ionization effect and subthreshold current in InAlAs/InGaAs metal-oxide-semiconductor metamorphic HEMT with a liquid phase oxidized InAlAs as gate insulator", IEEE Trans. Electron Devices, vol. 54, no. 3, pp. 418-424, 2007.03
    國際期刊 SCI
    義大機構典藏
  34. P. W. Sze, K. W. Lee, J. J. Huang, N. Y. Yang, and Y. H. Wang, "Liquid phase oxidation for InGaP/GaAs HBT passivation", Semiconductor Science and Technology, vol. 21, no. 8, pp. 1160-1166, 2006.08
    國際期刊 SCI
  35. K. W. Lee, N. Y. Yang, M. P. Houng, Y. H. Wang, and P. W. Sze, "Improved breakdown voltage and impact ionization in InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate", Applied Physics Lett., vol. 87, no. 26, pp. 263501-1-263501-3, 2005.12
    國際期刊 SCI
  36. K. W. Lee, P. W. Sze, Y. J. Lin, N. Y. Yang, M. P. Houng, and Y. H. Wang, "InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric", IEEE Electron Device Lett., vol. 26, no. 12, pp. 864-866, 2005.12
    國際期刊 SCI
  37. K. W. Lee, P. W. Sze, Y. H. Wang, and M. P. Houng, "AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric", Solid-State Electron., vol. 49, no. 2, pp. 213-217, 2005.02
    國際期刊 SCI
  38. K. W. Lee, Y. H. Wang, and M. P. Houng, "Liquid phase chemical enhanced oxidation on AlGaAs and its application", Jpn. J. Appl. Phys., vol. 43, no. 7A, pp. 4087-4091, 2004.07
    國際期刊 SCI
  39. H. R. Wu, K. W. Lee, T. B. Nian, D. W. Chou, J. J. Huang, Y. H. Wang, M. P. Houng, P. W. Sze, Y. K. Su, S. J. Chang, C. H. Ho, C. I. Chiang, Y. T. Chern, F. S. Juang, T. C. Wen, W. I. Lee, and J. I. Chyi, "Liquid phase deposited SiO2 on GaN", Materials Chemistry and Physics, vol. 80, no. 1, pp. 329-333, 2003.04
    國際期刊 SCI
  40. K. W. Lee, D. W. Chou, H. R. Wu, J. J. Huang, Y. H. Wang, M. P. Houng, S. J. Chang, and Y. K. Su, "GaN MOSFET with liquid phase deposited oxide gate", IEE Electron Lett., vol. 38, no. 15, pp. 829-830, 2002.07
    國際期刊 SCI
  41. D. W. Chou, K. W. Lee, J. J Huang, H. R. Wu, Y. H. Wang, M. P. Houng, S. J. Chang, and Y. K. Su, "AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase deposited oxide", Jpn. J. Appl. Phys., vol. 41, no. 7A, pp. L748-L750, 2002.07
    國際期刊 SCI